TIP31 / TIP31a / TIP31b / TIP31c npn plastic-encapsulate transistor elektronische bauelemente 19-sep-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead free features medium power linear switching applications absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit TIP31 TIP31a TIP31b TIP31c collector - base voltage v cbo 40 60 80 100 v collector - emitter voltage v ceo 40 60 80 100 v emitter - base voltage v ebo 5 v collector current -continuous i c 3 a cpllector power dissipation p c 2 w maximum junction to ambient r ja 62.5 c / w junction, storage temperature t j , t stg 150, -55~150 c to-220j
TIP31 / TIP31a / TIP31b / TIP31c npn plastic-encapsulate transistor elektronische bauelemente 19-sep-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector - base breakdown voltage TIP31 v (br)cbo 40 - - v i c =1ma, i e =0 TIP31a 60 - - TIP31b 80 - - TIP31c 100 - - collector - emitter breakdown voltage 1 TIP31 v (br)ceo 40 - - v i c =30ma, i b =0 TIP31a 60 - - TIP31b 80 - - TIP31c 100 - - emitter - base breakdown voltage v (br)ebo 5 - - v i e =1ma, i c =0 collector cut - off current TIP31 i cbo - - 200 a v cb =40v, i e =0 TIP31a v cb =60v, i e =0 TIP31b v cb =80v, i e =0 TIP31c v cb =100v, i e =0 collector cut-off current TIP31 / TIP31a i ceo - - 0.3 ma v ce =30v, i b =0 TIP31b / TIP31c v ce =60v, i b =0 emitter cut-off current i ebo - - 1 ma v eb =5v, i c =0 dc current gain h fe 25 - - v ce =4v, i c =1a 15 - 75 v ce =4v, i c =3a collector - emitter saturation voltage v ce(sat) - - 1.2 v i c =3a, i b =0.375a base C emitter voltage v be - - 1.8 v v ce =4v, i c =3a transition frequency f t 3 - - mhz v ce =10v, i c =0.5a notes 1. pulse test: pw Q 300 s, duty cycle Q 2%.
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